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PHN103 Datasheet(PDF) 8 Page - NXP Semiconductors |
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PHN103 Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 12 page ![]() 1997 Jun 20 8 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor PHN103 Fig.10 Source current as a function of source-drain diode forward voltage; typical values. VGD =0. (1) Tj = 150 °C. (2) Tj =25 °C. (3) Tj = −65 °C. handbook, halfpage 0 0.4 0.8 1.2 20 0 16 12 8 4 MGG336 ISD (A) VSD (V) (1) (2) (3) Fig.11 Drain-source on-state resistance as a function of gate-source voltage; typical values. handbook, halfpage −10 0 −2 −4 −6 −8 103 102 10 MGG337 RDSon (m Ω) VGS (V) (1) (2) (3) (4) (5) (6) (7) (8) VDS ≥ ID × RDSon; Tj =25 °C. (1) ID = 0.1 A. (2) ID = 0.5 A. (3) ID = 1.0 A. (4) ID = 2.75 A. (5) ID = 5.5 A. (6) ID = 8.5 A. (7) ID =10A. (8) ID =12A. |
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