PHN103 datasheet(2/12 Pages) PHILIPS

2 / 12 page

1997 Jun 20

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode

MOS transistor

PHN103

FEATURES

• High-speed switching

• No secondary breakdown

• Very low on-state resistance.

APPLICATIONS

• Motor and actuator driver

• Power management

• Synchronized rectification.

DESCRIPTION

N-channel enhancement mode MOS transistor in an 8-pin

plastic SOT96-1 (SO8) package.

CAUTION

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

PINNING - SOT96-1 (SO8)

SYMBOL

DESCRIPTION

n.c

not connected

source

gate

drain

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM116

n.c.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage (DC)

−

VSD

source-drain diode forward voltage

IS = 1.25 A

−

VGS

gate-source voltage (DC)

−±20

VGSth

gate-source threshold voltage

ID = 1 mA; VDS =VGS

2.8

drain current (DC)

Ts =80 °C

−

8.5

RDSon

drain-source on-state resistance

ID = 5.5 A; VGS =10V

−

0.03

Ω

Ptot

total power dissipation

Ts =80 °C

−

PHN103 Datasheet(PDF) 2 Page - NXP Semiconductors

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