PHN103 datasheet(3/12 Pages) PHILIPS

3 / 12 page

1997 Jun 20

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode

MOS transistor

PHN103

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Ts is the temperature at the soldering point of the drain lead.

2. Pulse width and duty cycle limited by maximum junction temperature.

3. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W.

4. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage (DC)

−

VGS

gate-source voltage (DC)

−±20

drain current (DC)

Ts =80 °C; note 1

−

8.5

IDM

peak drain current

note 2

−

Ptot

total power dissipation

Ts =80 °C

−

Tamb =25 °C; note 3

−

2.7

Tamb =25 °C; note 4

−

1.15

Tstg

storage temperature

−65

+150

°C

operating junction temperature

−65

+150

°C

Source-drain diode

source current (DC)

Ts =80 °C

−

ISM

peak pulsed source current

note 2

−

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

17.5

K/W

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