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PHN103 Datasheet(PDF) 9 Page - NXP Semiconductors |
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PHN103 Datasheet(HTML) 9 Page - NXP Semiconductors |
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9 / 12 page ![]() 1997 Jun 20 9 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor PHN103 Fig.12 Temperature coefficient of gate-source threshold voltage; typical values. VGSth at VDS =VGS; ID = 1 mA. k V GSth at Tj V GSth at 25 ° C -------------------------------------- = handbook, halfpage −100 1.1 0.9 0.6 0.7 1.2 1 0.8 −50 150 0 50 100 MGG338 Tj (°C) k Fig.13 Temperature coefficient of drain-source on-state resistance; typical values. (1) RDSon at VGS = 10 V; ID = 5.5 A. (2) RDSon at VGS = 4.5 V; ID = 2.75 A. k R DSon at Tj R DSon at 25 ° C ----------------------------------------- = handbook, halfpage −100 1.6 1.2 0.8 0.4 1.4 1 0.6 −50 150 0 (1) (2) 50 100 MGG339 Tj (°C) k |
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