Specifications and information are subject to change without notice

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 1 of 14 May 2007 ver 1

AP603

High Dynamic Range 7W 28V HBT Amplifier

Product Features

28 Vcc, 2.14 GHz, 5.5W CW Pout

5x6 mm power DFN package

Applications

Product Description

The AP603 is a high dynamic range power amplifier in a

lead-free/RoHS-compliant 5x6mm power DFN SMT

package. The single stage amplifier has excellent backoff

linearity, while being able to achieve high performance for

800-2200 MHz applications with up to +38.5 dBm of

compressed 1dB power.

The AP603 uses a high reliability, high voltage

InGaP/GaAs HBT process technology.

The device

incorporates proprietary bias circuitry to compensate for

variations in linearity and current draw over temperature.

The module does not require any negative bias voltage; an

internal active bias allows the AP603 to operate directly off

a commonly used high voltage supply (typically +24 to

+32V). An added feature allows the quiescent bias to be

adjusted externally to meet specific system requirements.

The AP603 is targeted for use as a pre-driver and driver

stage amplifier in wireless infrastructure where high

linearity and high efficiency is required. This combination

makes the device an excellent candidate for next generation

multi-carrier 3G mobile infrastructure.

Functional Diagram

IMD3 vs. Output Power vs. Icq

CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C

-80

-70

-60

-50

-40

-30

26

28

30

32

34

36

Output Power, PEP (dBm)

80 mA

160 mA

260 mA

Specifications

W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB

@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 160 mA

Parameter

Units Min

Typ

Max

Operational Bandwidth

MHz

800

2200

Test Frequency

MHz

2140

Output Channel Power

dBm

+30

Power Gain

dB

11.8

Input Return Loss

dB

10

Output Return Loss

dB

8.2

ACLR

dBc

-50

IMD3 @ +30 dBm PEP

dBc

-51

PIN_VPD Current, Ipd

mA

4

Operating Current, Icc

mA

246

Collector Efficiency

%

14.6

Output P1dB

dBm

+38.2

Quiescent Current, Icq

mA

160

Vpd, Vbias

V

+5

Vcc

V

+28

Absolute Maximum Rating

Parameter

Rating

-55 to +125 ºC

192 ºC

Input P6dB

80 V @ 0.1 mA

51 V @ 0.1 mA

320 mA

9.5 W

Operation of this device above any of these parameters may cause permanent damage.

Typical Performance

W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB

@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 160 mA

Parameter

Units

Typical

Test Frequency

MHz

940

1960

2140

Channel Power

dBm

+30

+30

+30

Power Gain

dB

17

13

11.8

Input Return Loss

dB

11

13

10

Output Return Loss

dB

5.5

7.5

8.2

ACLR

dBc

-52

-49

-50

IMD3 @ +30 dBm PEP

dBc

-52

-52

-51

Operating Current, Icc

mA

217

230

246

Collector Efficiency

%

16.6

15.5

14.6

Output P1dB

dBm

+38.5

+38.5

+38.2

Quiescent Current, Icq

mA

160

Vpd, Vbias

V

+5

Vcc

V

+28

Notes:

1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR

performance at +25

° C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 160 mA to

achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the

device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More

information is given in the other parts of this datasheet.

2. The AP603 evaluation board has been tested for ruggedness to be capable of handling:

7:1 VSWR @ +28 Vcc, 2140 MHz, 5.5W CW Pout,

5:1 VSWR @ +30 Vcc, 2140 MHz, 5.5W CW Pout,

3:1 VSWR @ +32 Vcc, 2140 MHz, 5.5W CW Pout.

Ordering Information

Part No.

Description

AP603-F

High Dynamic Range 28V 7W HBT Amplifier

AP603-PCB900

920-960 MHz Evaluation board

AP603-PCB1960 1930-1990 MHz Evaluation board

AP603-PCB2140 2110-2170 MHz Evaluation board