PMBFJ310 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1996 Sep 11

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

PMBFJ308; PMBFJ309;

PMBFJ310

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

STATIC CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient; note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)GSS

gate-source breakdown voltage IG = −1 µA; VDS =0

−25

−−

VGSoff

gate-source cut-off voltage

ID =1 µA; VDS =10V

PMBFJ308

−1

−−6.5

PMBFJ309

−1

−−4V

PMBFJ310

−2

−−6.5

VGSS

gate-source forward voltage

IG = 1 mA; VDS =0

−−

IDSS

drain current

VDS =10V; VGS =0

PMBFJ308

−

PMBFJ309

−

PMBFJ310

−

IGSS

gate leakage current

VGS = −15 V; VDS =0

−−−1nA

RDSon

drain-source on-state

resistance

VGS = 0; VDS = 100 mV

−

−Ω

y

fs

forward transfer admittance

ID = 10 mA; VDS =10V

−−

yos

common source output

admittance

ID = 10 mA; VDS =10V

−−

250

µS

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