1996 Sep 11

8

Philips Semiconductors

Product specification

N-channel silicon field-effect transistors

PMBFJ308; PMBFJ309;

PMBFJ310

Fig.13 Reverse transfer capacitance as a function

of gate-source voltage; typical values.

handbook, halfpage

−10

−40

4

3

1

0

2

MCD224

−8

−6

−2

Crs

(pF)

VGS (V)

Fig.14 Input capacitance as a function of

gate-source voltage; typical values.

handbook, halfpage

−10

0

10

0

MCD223

−8

−6

−4

−2

8

6

4

2

Cis

(pF)

VGS (V)

Fig.15 Drain current as a function of gate-source voltage; typical values.

handbook, full pagewidth

−2.5

−2

−1.5

−1

−0.5

0

10

1

MCD229

ID

(

µA)

VGS (V)