PMBFJ310 datasheet(2/12 Pages) PHILIPS

2 / 12 page

1996 Sep 11

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

PMBFJ308; PMBFJ309;

PMBFJ310

FEATURES

• Low noise

• Interchangeability of drain and source connections

• High gain.

APPLICATIONS

• AM input stage in car radios

• VHF amplifiers

• Oscillators and mixers.

DESCRIPTION

N-channel symmetrical silicon junction field-effect

transistors in a SOT23 package.

CAUTION

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

PINNING - SOT23

SYMBOL

DESCRIPTION

source

drain

gate

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM036

Top view

Marking codes:

PMBFJ308: M08.

PMBFJ309: M09.

PMBFJ310: M10.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−±25

VGSoff

gate-source cut-off voltage

VDS =10V; ID =1 µA

PMBFJ308

−1

−6.5

PMBFJ309

−1

−4V

PMBFJ310

−2

−6.5

IDSS

drain current

VGS = 0; VDS =10V

PMBFJ308

PMBFJ309

PMBFJ310

Ptot

total power dissipation

up to Tamb =25 °C

−

250

yfs

forward transfer admittance

VDS =10V; ID =10mA

−

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