1996 Sep 11

3

Philips Semiconductors

Product specification

N-channel silicon field-effect transistors

PMBFJ308; PMBFJ309;

PMBFJ310

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−±25

V

gate-source voltage

open drain

−−25

V

gate-drain voltage

open source

−−25

V

forward gate current (DC)

−

50

mA

total power dissipation

−

250

mW

storage temperature

−65

150

°C

operating junction temperature

−

150

°C

Fig.2 Power derating curve.

handbook, halfpage

0

50

100

200

400

300

100

0

200

150

MBB688

Ptot

(mW)

Tamb (°C)