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NextPower MOSFETs - Visit us at www.nxp.com/mosfets

NextPower 25 V & 30 V MOSFETs

in LFPAK (Power-SO8)

Benefits of Superjunction technology

Many suppliers focus on two favourable indicators when defining MOSFET performance, but this only tells part of the story.

The spider chart below shows the relative performance of NextPower versus the leading MOSFET vendors, comparing

the six most important MOSFET parameters required for high-performance & high reliability switching applications. The

outside edge of the graph represents the ‘best-in-class’ performance, whilst scoring towards the centre of the graph

represents a weakness.

} Low R

DS(on) gives low I

2

R losses and superior performance

when used in a SYNC FET or power OR-ing application

} Low Q

oss gives reduced losses between the drain

& source terminals since the energy stored in

the output capacitance (C

oss) is wasted whenever

the voltage changes across the output terminals

} SOA performance provides tolerance to overload & fault

conditions. The graph shows the maximum allowable

current for a 1 mS pulse at V

DS=10 V

} Low Miller charge (Q

GD) gives reduced switching losses

between the MOSFET’s drain & source terminals when

the MOSFET turns ON or turns OFF

} Low gate charge (Q

G) gives reduced losses in the gate

drive circuit since less energy is required to turn the

MOSFET ON & OFF

} Superior junction temperature rating, T

j(max), is proof that

LFPAK is the most rugged Power-SO8 package available.

LFPAK is the best choice for demanding environments

and where high reliability is required

Comparison of NextPower technology with key competitor types

RDS(on)max

@ Vgs = 4.5 V

T

j(max)

NXP

Competitor A

Competitor B

Combined Q

G &

Q

GD FOM

SOA rating

Q

oss FOM