4

NextPower MOSFETs - Visit us at www.nxp.com/mosfets

NextPower types – parametric data

The 25 V and 30 V types shown below are recommended for synchronous buck regulators, the low R

DS(on) types are also highly

recommended for Power OR-ing applications and low voltage isolated power supply topologies.

Type

Voltage (V)

R

DS(on)typ

V

GS = 4.5 V (mΩ)

Q

G(typ)

V

GS = 4.5 V (nC)

Q

GD(typ)

V

GS = 4.5 V (nC)

C

OSS (pF)

PSMN0R9-25YLC

25

0.95

51

14

1437

PSMN1R1-25YLC

25

1.2

39

11

1121

PSMN1R2-25YLC

25

1.35

31

8.3

994

PSMN1R7-25YLC

25

2

28

7.8

880

PSMN1R9-25YLC

25

2.2

27

7.4

761

PSMN2R2-25YLC

25

2.6

18

5.2

617

PSMN2R9-25YLC

25

3.45

16

4.4

501

PSMN3R2-25YLC

25

3.7

14

4

462

PSMN3R7-25YLC

25

4.25

10.1

3

370

PSMN4R0-25YLC

25

4.5

10.9

3.5

354

25 V NextPower types

NextPower MOSFETs use ‘Superjunction’ silicon technology to

deliver the optimum balance between low R

DS, low QG(tot), low

Q

GD, high SOA performance and low Coss at 25 V and 30 V.

Superjunction technology combines the benefits of a lateral

MOSFET, (low Q

g(tot) and low QGD) with the benefits of a

Trench-MOSFET (low R

DS(on) and 20 V rugged GATE rating)

resulting in a uniquely balanced specification.

NextPower uses an optimized balance of the different

resistance elements in the MOSFET to achieve a lower

on-resistance for every cell. The low cell resistance means that

NextPower types typically require fewer cells than competitor

devices to achieve the same R

DS(on), and a lower cell count

provides lower Q

G(tot), low QGD, low Coss and superior ‘Safe

operating area’ ruggedness.

NextPower technology uses p-Type

pillars to improve the breakdown

voltage in the OFF state, and a heavily

doped n-Type drift region to achieve

exceptionally low ON resistance.

Since fewer cells are required to

achieve a given R

DS rating, then gate

charge (Q

G), Miller charge (QGD),

output capacitance (C

oss) are all

reduced and optimum ruggedness

(denoted by the safe operating area

characteristics) is achieved.

Superjunction technology

Drain

p-Type

PILLARS

n-Type

DRIFT REGION

n+

Gate

p-Body

Source