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TDA5155 Datasheet(PDF) 8 Page - NXP Semiconductors |
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TDA5155 Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 24 page ![]() 1997 Apr 08 8 Philips Semiconductors Preliminary specification Pre-amplifier for Hard Disk Drive (HDD) with MR-read/inductive write heads TDA5155 8 FUNCTIONAL DESCRIPTION 8.1 Read mode The read mode disables the write circuitry to save power while reading. The read circuitry is disactivated for write, sleep and standby modes. The read circuitry may also be biased during write mode to shorten transients. The selected head is connected to a multiplexed low-noise read amplifier. The read amplifier has low-impedance inputs nRx and nRy (n is the number of the head) and low-impedance outputs RDx and RDy. The signal polarity is non-inverting from x and y inputs to x and y outputs. Ambient magnetic fields at the MR elements result in a relative change in MR resistance: This change produces a current variation: , where IMR is the bias current in the MR element. The current variation is amplified to form the read data output signal voltage, which is available at RDx and RDy. AC coupling between MR elements and amplifier stages prevents the amplifier input stages from overloading by DC voltages across the MR elements. A fast settling procedure shortens DC settling transients. An on-chip generated stable temperature reference voltage (1.32 V), available at the Rext pin, is dropped across an external resistor (10 k Ω) to form a global reference current for the write and the MR bias currents. The MR bias current DACs are programmed through the serial interface according to the following formula: (in mA), where d4-d0 are bits (either logic 0 or logic 1). At power-up all bits are set to logic 0, which results in a default MR current of 5 mA. The adjustable range of the MR currents is 5 mA to 20.5 mA. The MR bias currents are equal for the two stripes of each head. The gain amplifier is 1-bit programmable. The amplifier gain can be set to its nominal value or to the nominal value +3 dB. dR MR R MR -------------- dI MR I MR dR MR R MR -------------- × = I MR 0.5 10k Ω R ext --------------- 10 16d4 8d3 4d2 2d1 d0 ++ + + + () × = 8.2 Write mode To minimize power dissipation, the read circuitry may be disabled in write mode. The write circuitry is disabled in read, sleep and standby modes. In write mode, a programmable current is forced through the selected two-terminal inductive write head. The push-pull output drivers yield near rail-to-rail voltage swings for fast current polarity switching. The write data input can be either voltage or current input (see Chapter 12). In voltage mode, the differential write data inputs WDIx(v) and WDIy(v) are PECL (Positive Emitter Coupled Logic) compatible. The write data flip-flop can either be used or passed-by. In the case that the write data flip-flop is used, current polarity is toggled at the falling edges of Switching to write mode initializes the data flip-flop so that the write current flows in the write head from x to y. In the case that the write data flip-flop is not used, the signal polarity is non-inverting from x and y inputs to x and y outputs. The write current magnitude is controlled through on-chip DACs. The write current is defined as follows: (in mA), where d4-d0 are bits (either logic 0 or logic 1). The adjustable range of the write current is 20 mA to 51 mA. At power-up, the default values d4 = d3 = d2 = d1 = d0 = logic 0 are initialized, corresponding to IWR = 20 mA. IWR is the current provided by the write drivers: the current in the write coil and in the damping resistor together. The static current in the write coil is , where Rh is the resistance of the coil including leads and Rd is the damping resistor. V data V WDIx v () V WDIy v () – 2 ------------------------------------------------------ = I WR 10k Ω R ext --------------- 20 16d4 8d3 4d2 2d1 d0 ++ + + + () = I WR 1 R h R d ------- + ----------------- |
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