TDA5155 datasheet(18/24 Pages) PHILIPS

18 / 24 page

1997 Apr 08

Philips Semiconductors

Preliminary speciﬁcation

Pre-ampliﬁer for Hard Disk Drive (HDD)

with MR-read/inductive write heads

TDA5155

13 CHARACTERISTICS

VCC = 5.0 V; VCC(WD) =8V; VGND =0V; Tamb =25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Read characteristics

IMR

MR current adjust range

Rext =10kΩ; 0.5 mA steps

−

20.5

∆IMR

tolerance (excluding Rext)IMR programmed at 10 mA

−±4

−

Gv(dif)

differential voltage gain;

note 1

from head inputs to RDx, RDy;

RMR =28 Ω; IMR =10mA;

f = 20 MHz

d4 = 0

−

160

−

d4 = 1

−

226

−

Ri(dif)

differential input resistance

IMR =10mA

−

−Ω

Ci(dif)

differential input

capacitance

−

THD

total harmonic distortion

−

lower signal gain pass-band

edge

−3dB

−−

100

kHz

higher signal gain

pass-band edge

−3 dB; note 2

without gain boost

(4 nH lead inductance)

−

220

−

MHz

with gain boost

(50 nH lead inductance)

−

170

−

MHz

noise ﬁgure

RMR =28 Ω; IMR = 10 mA;

Tamb =25 °C; f = 20 MHz

−

3.0

3.2

Virn

input referred noise voltage;

note 3

RMR =28 Ω; IMR = 10 mA;

Tamb =25 °C; f = 20 MHz

−

0.9

1.0

nV/

√Hz

BF(L)

lower noise band edge

(+3 dB)

RMR =28 Ω; IMR = 10 mA;

Tamb =25 °C;

no lead inductance

−−

400

kHz

BF(H)

upper noise band edge

(+3 dB)

RMR =28 Ω; IMR = 10 mA;

Tamb =25 °C;

no lead inductance

−

220

−

MHz

channel separation; note 4

unselected head

−

PSRR

power supply rejection ratio;

note 5

f < 1 MHz; IMR =10mA

−

f < 100 MHz; IMR =10mA

−

CMRR

common mode rejection

ratio; note 5

from nRx-nRy to RDx-RDy RMR

mismatch < 5%

IMR =10mA

f < 1 MHz

−

f < 100 MHz

−

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