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TDA5155 Datasheet(PDF) 21 Page - NXP Semiconductors |
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TDA5155 Datasheet(HTML) 21 Page - NXP Semiconductors |
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21 / 24 page ![]() 1997 Apr 08 21 Philips Semiconductors Preliminary specification Pre-amplifier for Hard Disk Drive (HDD) with MR-read/inductive write heads TDA5155 Notes to the characteristics 1. The differential voltage gain depends on the MR resistance. It can be improved by programming the d4 bit in the configuration register. 2. The gain boost implements a pole-zero combination: The +3 dB gain boost corner frequency is . The −3 dB gain attenuation corner frequency is , where d3, d2, d1 and d0 are to be programmed via the serial interface. In practical use, the bandwidth is limited by the inductance of the connection between the MR heads and the pre-amplifier. 3. Noise calculation a) Definitions: The amplifier has a low input resistance. No lead resistance is taken into account. The input referred noise voltage, excluding the noise of the MR resistors, is defined as: , where Gv is the voltage gain, Vno is the noise voltage at the output of the amplifier, k is the Boltzmann constant and T is the temperature in K. The noise figure is defined as follows: in 1 Hz bandwidth. Note that RMR includes all resistances between Rx or Ry to ground. b) Noise figure versus IMR and RMR: Table 1 shows the variation of the noise figure with IMR and RMR. c) Input referred noise voltage: The input referred noise voltage calculation can be significantly different (from 1.0 to 0.44 nV/ √Hz for instance) by taking an equivalent signal-to-noise ratio into account when using two MR stripes (28 Ω for each stripe) or one MR stripe (42 Ω). It assumes that the signal coming from the head is larger for a dual-stripe head than for a single-stripe head (50% extra signal for a dual-stripe head). 4. The channel separation is defined by the ratio of the gain response of the amplifier using the selected head H(n) to the gain response of the amplifier using the adjacent head H(n ±1), head H(n) being selected. 800 MHz 8.d3 4.d2 2.d1 1.d0 +++ --------------------------------------------------------------------- 800 MHz 8.d3 4.d2 2.d1 1.d0 +++ --------------------------------------------------------------------- V irn () 2 V no G v --------- 2 4kT R MR1 R MR2 + () × – = F10 V no G v --------- 2 4kT R MR1 R MR2 + () × ------------------------------------------------------------ log × = 5. The PSRR (in dB) is defined as input referred ratio: , where Gv is the differential input to differential output gain, and Gp is the power supply to differential output gain.The CMRR (in dB) is defined as input referred ratio: , where Gv is the differential input to differential output gain and Gcm is the common mode input to differential output gain. Flex and board lay-out may affect these parameters significantly. 6. This refers to the crosstalk from SCLK and SDATA inputs via the read inputs to RDx and RDy. Two cases can be distinguished: a) When SEN is LOW, SCLK and SDATA are prohibited reaching the device and crosstalk is low. b) Programming via the serial interface is done with SEN HIGH. Then crosstalk can occur. A careful design of the board or flex-foil is required to avoid crosstalk via this path. 7. The rise and fall times depend on the write amplifier/write head combination. Lh and Rh represent the components on the evaluation board. Parasitic capacitances also limit the performance. 8. The write current rise/fall time asymmetry is defined by 9. Write-to-read recovery time includes the write mode to read mode switching using the R/W pin on the same head (see Fig.5). The AC signal reaches its full amplitude few tens of ns after appearing at the reader RDx and RDy outputs. 10. In read mode, the head switching, standby to read active switching and changing MR current include fast current settling (see Fig.5). The AC signal reaches its full amplitude few tenth of ns after appearing at the reader RDx and RDy outputs. 11. Write settling time includes the read mode to write mode switching using the R/W pin. 12. The typical supply current in read mode depends on the bias current for the MR element. 13. The typical supply current in write mode also depends on the write current. PSRR 20 log G v G p ------- × = CMRR 20 log G v G cm ----------- × = t r t f – 2t r t f + () ----------------------- |
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