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TDA8512 Datasheet(PDF) 8 Page - NXP Semiconductors |
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TDA8512 Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 24 page ![]() 2001 Nov 16 8 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J 11 THERMAL CHARACTERISTICS In accordance with IEC 60747-1. The measured thermal resistance of the IC-package (Rth(j-c)) is maximum 1.3 K/W if all four channels are driven. For a maximum ambient temperature of 60 °C and VP = 15 V, the following calculation for the heatsink can be made: For the application two SE outputs with 2 Ω load, the measured worst-case sine-wave dissipation is 2 × 7W For the application BTL output with 4 Ω load, the worst-case sine-wave dissipation is 12.5 W. So the total power dissipation is Pd(tot) =2 × 7 + 12.5 W = 26.5 W. At Tj(max) = 150 °C the temperature increase, caused by the power dissipation, is: ∆T = 150 °C − 60 °C=90 °C. So Pd(tot) × Rth(tot) = ∆T = 90 K. As a result: which means: Rth(hs) =Rth(tot) − Rth(j-c) = 3.4 − 1.3 = 2.1 K/W. The above calculation is for application at worst-case (stereo) sine-wave output signals. In practice, music signals will be applied. In that case the maximum power dissipation will be about the half the sine-wave power dissipation, which allows the use of a smaller heatsink. So Pd(tot) × Rth(tot) = ∆T = 90 K. As a result: which means: Rth(hs) =Rth(tot) − Rth(j-c) = 6.8 − 1.3 = 5.5 K/W. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air 40.0 K/W Rth(j-c) thermal resistance from junction to case see Fig.5 1.3 K/W R th tot () 90 26.5 ----------- 3.4 K/W == R th tot () 90 13.25 --------------- 6.8 K/W == handbook, halfpage 3.0 K/W 0.7 K/W 3.0 K/W virtual junction output 1 output 2 case 3.0 K/W 0.7 K/W 3.0 K/W output 3 output 4 MEA860 - 2 0.2 K/W Fig.5 Equivalent thermal resistance network. |
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