TDA8512 datasheet(18/24 Pages) PHILIPS

18 / 24 page

2001 Nov 16

Philips Semiconductors

Preliminary speciﬁcation

26 W BTL and 2

× 13 W SE or

× 13 W SE power ampliﬁer

TDA8512J

handbook, halfpage

MGW437

Po (W)

10−2

10−1

110

102

THD

(%)

10−1

10−2

(1)

(2)

(3)

Fig.21 THD as a function of output power at

RL =4 Ω.

BTL mode.

(1) fi = 10 kHz.

(2) fi = 1 kHz.

(3) fi = 100 Hz.

handbook, halfpage

MGW438

10−2

10−1

110

102

THD

(%)

10−1

10−2

fi (kHz)

Fig.22 THD as a function of frequency; no

bandpass applied.

BTL mode.

Po = 1 W; RL =4 Ω.

handbook, halfpage

MGW439

SVRR

(dB)

−60

−80

−40

−20

10−2

10−1

110

102

(1)

(2)

fi (kHz)

Fig.23 SVRR as a function of frequency at

VREF = 1 V; no bandpass applied.

BTL mode.

(1) Operating.

(2) Mute.

handbook, halfpage

(W)

101520

VP (V)

MGW440

(1)

(2)

(3)

(4)

Fig.24 Output power as a function of supply

voltage.

BTL mode.

(1) RL =4 Ω; THD = 10%.

(2) RL =4 Ω; THD = 0.5%.

(3) RL =8 Ω; THD = 10%.

(4) RL =8 Ω; THD = 0.5%.

TDA8512 Datasheet(PDF) 18 Page - NXP Semiconductors

TDA8512 Datasheet(HTML) 18 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24

Datasheet Download

Link URL