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TDA8512 Datasheet(PDF) 13 Page - NXP Semiconductors |
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TDA8512 Datasheet(HTML) 13 Page - NXP Semiconductors |
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13 / 24 page  2001 Nov 16 13 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier TDA8512J handbook, full pagewidth MGW428 100 nF 513 220 nF 1 RL1 RL1 RL2 4 Ω 6 OUT1 OUT2 OUT3 OUT4 8 711 GND1 GND2 VP TDA8512J 2200 µF 2 3 reference voltage 15 10 4 17 12 input 1 14 Cout (2) Cout (2) SGND RR MODE VP1 VP2 INV1 INV2 1 k Ω(1) 220 nF 100 µF input 2 1 k Ω(1) INV3 16 INV3 9 REF 470 nF inputs 3 and 4 1 k Ω(1) INV4 60 k Ω 60 k Ω 60 k Ω 60 k Ω 1/2VP Fig.7 Application diagram for one BTL amplifier and two SE amplifiers. (1) Advised when driven with hard clipping input signals. (2) For frequencies down to 20 Hz: Cout = 4700 µF at RL1 =2 Ω. Cout = 2200 µF at RL1 =4 Ω. |
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