October 2012 : Rev0

2/5

Electrical Characteristics : T

C=25℃, unless otherwise noted

Note :

1. Repeated rating : Pulse width limited by safe operating area

2. L=4.3mH, I

AS = 20A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃

3 I

SD ≤ 20A, di/dt ≤ 200A/µ s , VDD ≤ BVDS, Starting TJ= 25 ℃

4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Parameter

Symbol

Test condition

Min

Typ

Max

Units

OFF

Drain-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250 µA

500

--

--

V

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

--

--

1

µA

VDS = 400 V, TC = 125

°C

--

--

10

µA

Forward Gate-Source Leakage Current

IGSSF

VGS = 30 V, VDS = 0 V

--

--

100

nA

Reverse Gate-Source Leakage Current

IGSSR

VGS = -30 V, VDS = 0 V

--

--

-100

nA

ON

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

3

--

5

V

Drain-Source On-Resistance

RDS(on)

VGS = 10 V, ID = 10 A

--

0.25

0.30

W

Forward Transconductance

(Note 4)

gFS

VDS = 30 V, ID = 10 A

--

14

--

S

DYNAMIC

Input Capacitance

Ciss

VDS = 25 V, VGS = 0 V,

--

2880

--

pF

Output Capacitance

Coss

f = 1.0 MHz

--

283

--

pF

Reverse Transfer Capacitance

Crss

--

10

--

pF

SWITCHING

Turn-On Delay Time

(Note 4,5)

td(on)

VDD = 250 V, ID = 20 A,

--

64

--

ns

Turn-On Rise Time

(Note 4,5)

tr

RG = 25 Ω

--

61

--

ns

Turn-Off Delay Time

(Note 4,5)

td(off)

--

123

--

ns

Turn-Off Fall Time

(Note 4,5)

tf

--

38

--

ns

Total Gate Charge

(Note 4,5)

Qg

VDS = 400 V, ID = 20 A,

--

44

--

nC

Gate-Source Charge

(Note 4,5)

Qgs

VGS = 10 V

--

14

--

nC

Gate-Drain Charge

(Note 4,5)

Qgd

--

13

--

nC

SOURCE DRAIN DIODE

Maximum Continuous Drain-Source

IS

---

--

--

20

A

Diode Forward Current

Maximum Pulsed Drain-Source

ISM

---

--

--

80

A

Diode Forward Current

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 20 A

--

--

1.5

V

Reverse Recovery Time

(Note 4)

trr

VGS = 0 V, IS = 20 A

--

421

--

ns

Reverse Recovery Charge

(Note 4)

Qrr

dIF / dt = 100 A/µs

--

5.9

--

µC

SW20N50D

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