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SW20N50D Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part # SW20N50D
Description  N-channel MOSFET
PDF  5 Pages
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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SW20N50D Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

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October 2012 : Rev0
1/5
SW20N50D
Features
 Low gate charge
 100% avalanche tested
 Improved dv/dt capability
 RoHS compliant
 JEDEC Qualification
Absolute Maximum Ratings
Parameter
Symbol
SW20N50D
Unit
Drain-Source Voltage
V
DS
500
V
Gate-Source Voltage
V
GS
±30
V
Continuous Drain Current
T
C = 25 ℃
I
D
20
A
T
C = 100 ℃
12.4
A
Pulsed Drain Current (Note 1)
I
DM
80
A
Single Pulse Avalanche Energy (Note 2)
E
AS
770
mJ
Repetitive Avalanche Current (Note 1)
I
AR
20
A
Repetitive Avalanche Energy (Note 1)
E
AR
31.2
mJ
Power Dissipation
T
C = 25 ℃
P
D
312
W
Derate above 25 ℃
2.5
W/℃
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
T
J, TSTG
-55~150
℃
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
T
L
300
℃
Thermal Characteristics
Parameter
Symbol
SW20N50D
Unit
Maximum Thermal resistance, Junction-to-Case
RqJC
0.4
℃/W
Maximum Thermal resistance, Junction-to-Ambient
RqJA
62.5
℃/W
* Limited only by maximum junction temperature
Device
Package
Marking
Remark
SW20N50D
TO-3PN
SW20N50D
RoHS
BV
DSS
I
D
R
DS(on)
500V
20A
< 0.3
W
N-channel MOSFET
www.seawontech.com


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