R8C23 datasheet(30/52 Pages) RENESAS

30 / 52 page

R8C/22 Group, R8C/23 Group

5. Electrical Characteristics

Rev.1.10 Mar 16, 2007

Page 30 of 48

REJ03B0097-0110

NOTES:

VCC=2.7 to 5.5 V at Topr = -40 to 85

°C (D, J version) / -40 to 125°C (K version), unless otherwise specified.

Definition of program and erase

The program and erase endurance show an erase endurance for every block. If the program and erase endurance is n times

(n = 100, 1,000, 10,000), n times erase can be performed for every block. For example, if performing 1-byte write to the

distinct addresses on block A of 1 Kbyte block 1,024 times and then erasing that block, program and erase endurance is

counted as one time. However, do not perform multiple programs to the same address for one time ease.(disable

overwriting).

Endurance to guarantee all electrical characteristics after program and erase.(1 to Min. value can be guaranteed).

In the case of a system to execute multiple programs, perform one erase after programming as reducing effective reprogram

endurance not to leave blank area as possible such as programming write addresses in turn. If programming a set of 16

bytes, programming up to 128 sets and then erasing them one time can reduce effective reprogram endurance. To leave

erase endurance for every block as information and determine the restricted endurance are recommended.

If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at

least three times until the erase error does not occur.

Customers desiring program/erase failure rate information should contact their Renesas technical support representative.

The data hold time includes time that the power supply is off or the clock is not supplied.

Table 5.4

Flash Memory (Program ROM) Electrical Characteristics

Symbol

Parameter

Conditions

Standard

Unit

Min.

Typ.

Max.

−

Program/erase endurance(2)

R8C/22 Group

100(3)

−−

times

R8C/23 Group

1,000(3)

−−

times

−

Byte program time

−

400

µs

−

Block erase time

−

0.4

td(SR-SUS)

Time delay from suspend request until

erase suspend

−−

97 + CPU clock

× 6 cycle

µs

−

Interval from erase start/restart until

following suspend request

650

−−

µs

−

Interval from program start/restart until

following suspend request

−−

−

Time from suspend until program/erase

restart

−−

3 + CPU clock

4 cycle

µs

−

Program, erase voltage

2.7

−

5.5

−

Read voltage

2.7

−

5.5

−

Program, erase temperature

−

°C

−

Data hold time(7)

Ambient temperature = 55

°C20

−−

year

R8C23 Datasheet(PDF) 30 Page - Renesas Technology Corp

R8C23 Datasheet(HTML) 30 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52

Datasheet Download

Link URL