R8C23 datasheet(31/52 Pages) RENESAS

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R8C/22 Group, R8C/23 Group

5. Electrical Characteristics

Rev.1.10 Mar 16, 2007

Page 31 of 48

REJ03B0097-0110

NOTES:

VCC = 2.7 to 5.5 V at Topr = -40 to 85

°C (D, J version) / -40 to 125°C (K version), unless otherwise specified.

Definition of program and erase

The program and erase endurance shows an erase endurance for every block.

If the program and erase endurance is n times (n = 100, 1,000, 10,000), n times erase can be performed for every block.

For example, if performing 1-byte write to the distinct addresses on block A of 1 Kbyte block 1,024 times and then erasing

that block, program and erase endurance is counted as one time.

However, do not perform multiple programs to the same address for one time ease (disable overwriting).

MInimum endurace to guarantee all electrical characteristics after program and erase (1 to Min. value can be guaranteed).

Standard of block A and block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000 times

are the same as that in program ROM.

In the case of a system to execute multiple programs, perform one erase after programming as reducing effective reprogram

endurance not to leave blank area as possible such as programming write addresses in turn. If programming a set of 16

bytes, programming up to 128 sets and then erasing them one time can reduce effective reprogram endurance. Additionally,

averaging erase endurance for block A and B can reduce effective reprogram endurance more. To leave erase endurance for

every block as information and determine the restricted endurance are recommended.

If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at

least three times until the erase error does not occur.

Customers desiring program/erase failure rate information should contact their Renesas technical support representative.

125

°C for K version.

The data hold time includes time that the power supply is off or the clock is not supplied.

Table 5.5

Flash Memory (Data Flash Block A, Block B) Electrical Characteristics(4)

Symbol

Parameter

Conditions

Standard

Unit

Min.

Typ.

Max.

−

Program/erase endurance(2)

10,000(3)

−−

times

−

Byte program time

(Program/erase endurance

≤ 1,000 times)

−

400

µs

−

Byte program time

(Program/erase endurance

> 1,000 times)

−

−µs

−

Block erase time

(Program/erase endurance

≤ 1,000 times)

−

0.2

−

Block erase time

(Program/erase endurance

> 1,000 times)

−

0.3

−

td(SR-SUS) Time delay from suspend request until

erase suspend

−−

97 + CPU clock

× 6 cycle

µs

−

Interval from erase start/restart until

following suspend request

650

−−

µs

−

Interval from program start/restart until

following suspend request

−−

−

Time from suspend until program/erase

restart

−−

3 + CPU clock

× 4 cycle

µs

−

Program, erase voltage

2.7

−

5.5

−

Read voltage

2.7

−

5.5

−

Program, erase temperature

-40

−

85(8)

°C

−

Data hold time(9)

Ambient temperature = 55

°C20

−−

year

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