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RT1060 Datasheet(PDF) 40 Page - NXP Semiconductors |
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RT1060 Datasheet(HTML) 40 Page - NXP Semiconductors |
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40 / 119 page ![]() i.MX RT1060 Crossover Processors for Consumer Products, Rev. 4, 04/2024 40 NXP Semiconductors Electrical Characteristics 4.3.3 Output buffer impedance parameters This section defines the I/O impedance parameters of the i.MX RT1060 processors for the following I/O types: • Single Voltage General Purpose I/O (GPIO) NOTE GPIO I/O output driver impedance is measured with “long” transmission line of impedance Ztl attached to I/O pad and incident wave launched into transmission line. Rpu/Rpd and Ztl form a voltage divider that defines specific voltage of incident wave relative to NVCC_XXXX. Output driver impedance is calculated from this voltage divider (see Figure 6). Table 25. General purpose I/O AC parameters 3.3 V mode Parameter Symbol Test Condition Min Typ Max Unit Output Pad Transition Times, rise/fall (Max Drive, ipp_dse=101) tr, tf 15 pF Cload, slow slew rate 15 pF Cload, fast slew rate — — 1.70/1.79 1.06/1.15 ns ns Output Pad Transition Times, rise/fall (High Drive, ipp_dse=011) tr, tf 15 pF Cload, slow slew rate 15 pF Cload, fast slew rate — — 2.35/2.43 1.74/1.77 Output Pad Transition Times, rise/fall (Medium Drive, ipp_dse=010) tr, tf 15 pF Cload, slow slew rate 15 pF Cload, fast slew rate — — 3.13/3.29 2.46/2.60 Output Pad Transition Times, rise/fall (Low Drive. ipp_dse=001) tr, tf 15 pF Cload, slow slew rate 15 pF Cload, fast slew rate — — 5.14/5.57 4.77/5.15 Input Transition Times1 1 Hysteresis mode is recommended for inputs with transition times greater than 25 ns. trm — — — 25 ns |
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