© 1996 Microchip Technology Inc.

DS20040J-page 1

FEATURES

• Low power CMOS technology

• Pin selectable memory organization

- 128 x 8 or 64 x 16 bit organization

• Single 5V only operation

• Self timed WRITE, ERAL and WRAL cycles

• Automatic erase before WRITE

• RDY/BSY status information during WRITE

• Power on/off data protection circuitry

• 1,000,000 ERASE/WRITE cycles guaranteed

• Data Retention > 200 Years

• 8-pin DIP or SOIC package

• Temperature ranges supported

DESCRIPTION

The Microchip Technology Inc. 59C11 is a 1K bit Elec-

trically Erasable PROM. The device is configured as

128 x 8 or 64 x 16, selectable externally by means of

the control pin ORG. Advanced CMOS technology

makes this device ideal for low power nonvolatile mem-

ory applications. The 59C11 is available in the standard

8-pin DIP and a surface mount SOIC package.

- Commercial (C):

0˚C to

+70˚C

- Industrial (I):

-40˚C to

+85˚C

- Automotive (E):

-40˚C to +125˚C

PACKAGE TYPES

BLOCK DIAGRAM

1

2

3

4

8

7

6

5

CS

CLK

DI

DO

SS

V

RDY/BSY

ORG

V

CC

1

2

3

4

8

7

6

5

SS

V

RDY/BSY

ORG

V

CC

CS

CLK

DI

DO

DIP

SOIC

MEMORY

ARRAY

128 x 8 or

64 x 16

DATA REGISTER

DO

MODE

DECODE

LOGIC

CLOCK

GENERATOR

OUTPUT

BUFFER

DI

CS

CLK

RDY/BSY

ORG

ADDRESS

DECODER

59C11

Microwire is a registered trademark of National Semiconductor Incorporated.

This document was created with FrameMaker404