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TMS29F040 Datasheet(PDF) 15 Page - Texas Instruments

Part # TMS29F040
Description  524288 BY 8-BIT FLASH MEMORY
PDF  37 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS29F040 Datasheet(HTML) 15 Page - Texas Instruments

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TMS29F040
524288 BY 8-BIT
FLASH MEMORY
SMJS820C – APRIL 1996 – REVISED JUNE 1998
15
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
timing requirements controlled by W (see Figure 4, Figure 7, Figure 9, Figure 11, Figure 13,
Figure 15, and Figure 17)
ALTERNATE
’29F040-60
’29F040-70
’29F040-90
UNIT
ALTERNATE
SYMBOL
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
tAVAV
Cycle time, write
tc(W)
60
70
90
ns
tWHWH1 Cycle time, programming operation
tc(W)PR
18
18
18
µs
tWHWH2 Cycle time, sector-erase operation
1
30
1
30
1
30
s
tWHWH3 Cycle time, chip-erase operation
8
120
8
120
8
120
s
tWLAX
Hold time, address
th(A)
40
45
45
ns
tWHDX
Hold time, data valid after W high
th(D)
0
0
0
ns
tWHEH
Hold time, E
th(E)
0
0
0
ns
tWHWL
Pulse duration, W high
tw(WH)
20
20
20
ns
tWLWH1
Pulse duration, W low
tw(WL)
30
35
45
ns
tWLWH2
Pulse duration, W low (see Note 8)
100
100
100
µs
tWLWH3
Pulse duration, W low (see Note 9)
10
10
10
ms
tGHWL
Recovery time, read before write
trec(R)
0
0
0
ns
tAVWL
Setup time, address
tsu(A)
0
0
0
ns
tDVWH
Setup time, data
tsu(D)
30
30
45
ns
tAVGH
Setup time, A0 and A6 low and A1
high to G high (see Note 8)
0
0
0
ns
tAVGEH
Setup time, A0 low and A1 high to G
and E high (see Note 9)
0
0
0
ns
tELWL
Setup time, E
tsu(E)
0
0
0
ns
tGHWH
Setup time, G
0
0
0
ns
tVCEL
Setup time, VCC
50
50
50
µs
tEHVWL
Setup time, E VID to W (see Note 9)
4
4
4
µs
tGHVWL
Setup time, G VID to W
(see Notes 8 and 9)
4
4
4
µs
tHVT
Transition time, VID
(see Notes 8 and 9)
4
4
4
µs
NOTES:
8. Sector-protect timing (see Figure 15)
9. Sector-unprotect timing (see Figure 17)



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