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F49L004BA Datasheet(PDF) 21 Page - Elite Semiconductor Memory Technology Inc.

Part # F49L004BA
Description  4 Mbit (512K x 8) 3V Only CMOS Flash Memory
PDF  46 Pages
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

F49L004BA Datasheet(HTML) 21 Page - Elite Semiconductor Memory Technology Inc.

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EFST
preliminary
F49L004UA / F49L004BA
Elite Flash Storage Technology Inc.
Publication Date : Aug. 2003
Revision: 0.2
21/46
10.2 Program/Erase Operation
Table 11. WE Controlled Program/Erase Operations(TA = 0C to 70C, VCC = 2.7V~3.6V)
-70
-90
Symbol
Description
Min.
Max.
Min.
Max.
Unit
tWC
Write Cycle Time (Note 1)
70
90
ns
tAS
Address Setup Time
0
0
ns
tAH
Address Hold Time
45
45
ns
tDS
Data Setup Time
35
35
ns
tDH
Data Hold Time
0
0
ns
tOES
Output Enable Setup Time
0
0
ns
tGHWL
Read Recovery Time Before
Write (OE High to WE low)
00
ns
tCS
CE Setup Time
00
ns
tCH
CE Hold Time
00
ns
tWP
Write Pulse Width
35
35
ns
tWPH
Write Pulse Width High
30
30
ns
tWHWH1
Programming Operation (Note 2)
(Byte program time)
9(typ.)
9(typ.)
us
tWHWH2
Sector Erase Operation (Note 2)
0.7(typ.)
0.7(typ.)
sec
tVCS
VCC Setup Time (Note 1)
50
50
us
tRB
Recovery Time from RY/BY
00
ns
tbusy
Program/Erase Valid to RY/BY Delay
90
90
ns
Notes :
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.



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