AMS4106 datasheet(4/11 Pages) ADMOS

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AMS4106

ELECTRICAL CHARACTERISTICS (continued)

Electrical Characteristics at TJ = -40 °C to 125 °C and Vin = 4.5V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

AMS4106

Min.

Typ.

Max.

Units

Soft Start (SS)

2.22

µA

f = 250 kHz

4.6

Internal soft start (10% to 90%)

f = 500 kHz

2.3

POWER GOOD (PWRGD PIN)

Power good threshold

Rising voltage

95%

f = 250 kHz

Rising edge delay

f = 500 kHz

Output saturation voltage

Isink = 1 mA, VIN > 4.5 V

0.05

Output saturation voltage

Isink = 1 µA, VIN = 0 V

0.075

PWR

Open collector leakage

Voltage on PWRGD = 6 V

µA

CURRENT LIMIT

Current limit

VIN = 12

6.1

6.5

7.5

Current limit Hiccup Time

f = 500 kHz

4.5

THERMAL SHUTDOWN

Thermal shutdown trip point

145

°C

Thermal shutdown hysteresis

(1)

°C

LOW SIDE EXTERNAL FET DRIVE

VIN = 4.5V, Capacitive load = 1000 pF

Turn on rise time, (10%/90%)

(1)

VIN = 8 V, Capacitive load = 1000 pF

Deadtime

(1)

VIN = 12 V

VIN = 4.5 V sink/ source

7.5

Driver ON resistance

VIN = 12 V sink/ source

Ω

OUTPUT POWER MOSFETS (LX PIN)

Lx node voltage when disabled

DC conditions and no load, EN = 0 V

0.5

VIN = 4.5 V, Idc = 100 mA

1.13

1.42

Voltage drop, low side FET and

diode

VIN = 12 V, Idc = 100 mA

1.08

1.38

VIN = 4.5 V, BST-LX = 4.5 V, Io = 0.5 A

rDS (ON) High side power switch

VIN = 12 V, BST-LX = 8 V, Io = 0.5 A

m Ω

(1) Specified by design, not production tested.

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