GL828 USB 2.0 SD/MMC Single Slot Card Reader Controller

©2000-2006 Genesys Logic Inc. - All rights reserved.

Page 16

6.4 PMOS Characteristics

Table 6.4 - PMOS Driving Strength versus Junction Temperature

(Core Power=1.8V, IO Power=3.3V)

Junction Temperature

25 °°°°C

80 °°°°C

0 °°°°C

Driving Strength (mA)

186.2 ± 10%

153.5 ± 10%

212.7 ± 10%

On-Resistance (ohm)

1.61 ± 10%

1.951 ± 10%

1.421 ± 10%

Note:

1.

Driving strength is defined as the PMOS sinking current when Vio=3.3V, Vd=3.1V.

2.

On-resistance is calculated by 0.2V divided by driving strength.

Figure 6.1 - Embedded PMOS Switch Architecture

Figure 6.2 – V-I Curve of PMOS Switch @ 25 °°°°C