QM30 datasheet(2/5 Pages) MITSUBISHI

2 / 5 page

Feb.1999

Ratings

600

250

1.8

300

–40~+150

–40~+125

2500

1.47~1.96

15~20

1.96~2.94

20~30

210

Conditions

IC=1A, VEB=2V

VEB=2V

Emitter open

Collector open

DC (forward diode current)

TC=25

°C

Peak value of one cycle of 60Hz (half wave)

Charged part to case, AC for 1 minute

Main terminal screw M5

Mounting screw M6

Typical value

ABSOLUTE MAXIMUM RATINGS (Tj=25

°C, unless otherwise noted)

Symbol

VCEX (SUS)

VCEX

VCBO

VEBO

–IC

–ICSM

Tstg

Viso

—

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Collector reverse current

Collector dissipation

Base current

Surge collector reverse current

(forward diode current)

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Weight

Unit

°C

N·m

kg·cm

N·m

kg·cm

MITSUBISHI TRANSISTOR MODULES

QM30DY-H

MEDIUM POWER SWITCHING USE

INSULATED TYPE

ELECTRICAL CHARACTERISTICS (Tj=25

°C, unless otherwise noted)

Unit

—

µs

°C/W

Limits

Min.

—

75/100

—

Symbol

ICEX

ICBO

IEBO

VCE (sat)

VBE (sat)

–VCEO

hFE

ton

Rth (j-c) Q

Rth (j-c) R

Rth (c-f)

Parameter

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

Switching time

Thermal resistance

(junction to case)

Contact thermal resistance

(case to fin)

Test conditions

VCE=600V, VEB=2V

VCB=600V, Emitter open

VEB=7V

IC=30A, IB=0.4A

–IC=30A (diode forward voltage)

IC=30A, VCE=2V/5V

VCC=600V, IC=30A, IB1=–IB2=0.6A

Transistor part (per 1/2 module)

Diode part (per 1/2 module)

Conductive grease applied (per 1/2 module)

Typ.

—

Max.

1.0

200

2.0

2.5

1.85

—

1.5

3.0

0.5

2.0

0.15

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