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TMUX7348F Datasheet(PDF) 39 Page - Texas Instruments |
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TMUX7348F Datasheet(HTML) 39 Page - Texas Instruments |
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39 / 54 page ![]() 8.3.2.7 Latch-Up Immunity Latch-up is a condition where a low impedance path is created between a supply pin and ground. This condition is caused by a trigger (current injection or overvoltage), but once activated, the low impedance path remains even after the trigger is no longer present. This low impedance path may cause system upset or catastrophic damage due to excessive current levels. The latch-up condition typically requires a power cycle to eliminate the low impedance path. The TMUX7348F-EP is constructed on silicon on insulator (SOI) based process where an oxide layer is added between the PMOS and NMOS transistor of each CMOS switch to prevent parasitic structures from forming. The oxide layer is also known as an insulating trench and prevents triggering of latch up events due to overvoltage or current injections. The latch-up immunity feature allows the TMUX7348F-EP to be used in harsh environments. For more information on latch-up immunity refer to the Using Latch-Up Immune Multiplexers to Help Improve System Reliability application report. 8.3.2.8 EMC Protection The TMUX7348F-EP is not intended for standalone electromagnetic compatibility (EMC) protection in industrial applications. There are three common high voltage transient specifications that govern industrial high voltage transient specification: IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and IEC61000-4-5 (surge immunity). A transient voltage suppressor (TVS), along with some low-value series current limiting resistors, are required to prevent source input voltages from going above the rated ±60 V limits. When selecting a TVS protection device, it is critical to ensure that the maximum working voltage is greater than both the normal operating range of the input source pins to be protected and any known system common-mode overvoltage that may be present due to incorrect wiring, loss of power, or short circuit. Figure 8-2 shows an example of the proper design window when selecting a TVS device. Region 1 denotes normal operation region of TMUX7348F-EP where the input source voltages stay below the fault supplies VFP and VFN. Region 2 represents the range of possible persistent DC (or long duration AC overvoltage fault) presented on the source input pins. Region 3 represents the margin between any known DC overvoltage level and the absolute maximum rating of the TMUX7348F-EP. The TVS breakdown voltage must be selected to be less than the absolute maximum rating of the TMUX7348F-EP, but greater than any known possible persistent DC or long duration AC overvoltage fault to avoid triggering the TVS inadvertently. Region 4 represents the margin system designers must impose when selecting the TVS protection device to prevent accidental triggering of ESD cells of the TMUX7348F-EP. Normal Operation Fault Voltage Supply VFP System Overvoltage Overvoltage Protection Window Device Absolute Max Rating Internal ESD Trigger Voltage 1 2 3 4 TVS Breakdown Voltage Fault Voltage Supply VFN 0 V Overvoltage Protection Window 2 3 4 TVS Breakdown Voltage System Overvoltage Device Absolute Max Rating Internal ESD Trigger Voltage Figure 8-2. System Operation Regions and Proper Region of Selecting a TVS Protection Device www.ti.com TMUX7348F-EP SCDS461A – NOVEMBER 2023 – REVISED JANUARY 2025 Copyright © 2025 Texas Instruments Incorporated Submit Document Feedback 39 Product Folder Links: TMUX7348F-EP |
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