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TPS820F Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # TPS820F
Description  Silicon Epitaxial Planar
PDF  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPS820F Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TPS820(B,F)
2007-10-01
2
Pin Configuration
Optical and Electrical Characteristics (Ta = 25°C, VCC = 5 V)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Current consumption
ICC
E
= 0, IL must be open between
pins
⎯
0.017
1
μA
Light current (1)
IL(1)
E
= 0.01 mW/cm
2
(Note2)
150
⎯
600
μA
Light current (2)
IL(2)
E
= 0.1 mW/cm
2
(Note2)
1.5
⎯
6
mA
Output linearity
IL(2)/IL(1)
⎯
8
10
12
⎯
Saturation output voltage
VOUT(sat)
E
= 0.1 mW/cm
2
(Note2)
RL = 10 kΩ
4.1
4.2
⎯
V
Dark current
ID
E
= 0
⎯
⎯
0.5
μA
Peak sensitivity wavelength
λp
⎯
⎯
870
⎯
nm
Rise time
tr
⎯
250
⎯
μs
Fall time
tf
VOUT = 2.5 V
RL = 10 kΩ
(Note3)
⎯
700
⎯
μs
Note 2: The light used is a CIE standard A light source (a standard tungsten bulb with a color temperature of 2856K)
Note 3: Switching time measurement circuit and waveform
Precautions
• When this device is used in combination with an LED lamp, the lamp must be an infrared LED lamp.
• To stabilize the power line, insert a bypass capacitor of up to 0.01 μF between VCC and GND, close to the device.
• When the power is turned on, the output value will fluctuate for 1 ms as the internal circuit stabilizes.
Current
AMP.
1. GND
2. OUT
3. VCC
tr
tf
90%
10%
VOUT
IF
TPS820
VOUT
VCC
RL
Pulse drive
0.01
μF



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