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TLP351 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TLP351 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 8 page ![]() TLP351 2007-10-01 1 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP351 Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP351 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP351 is capable of “direct” gate drive of lower Power IGBTs. • Peak output current: ±0.6 A (max) • Guaranteed performance over temperature: −40 to 100°C • Supply current: 2 mA (max) • Power supply voltage: 10 to 30 V • Threshold input current : IF = 5 mA (max) • Switching time (tpLH/tpHL) : 700 ns (max) • Common mode transient immunity: 10 kV/μs • Isolation voltage: 3750 Vrms • Option(D4) VDE Approved : DIN EN60747-5-2 Maximum Operating Insulation Voltage : 890VPK Highest Permissible Over Voltage : 4000VPK (Note):When a EN60747-5-2 approved type is needed, Please designate “Option(D4)” Truth Table Input LED Tr1 Tr2 Output H ON ON OFF H L OFF OFF ON L Unit: mm TOSHIBA 11-10C4 Weight: 0.54 g (typ.) 8 1: NC 2: Anode 3: Cathode 4: NC 5: GND 6: VO (output) 7: NC 8: VCC 7 6 5 1 2 3 4 Pin Configuration (top view) Schematic A 0.1 μF bypass capacitor must be connected between pin 8 and 5. 2 + 3 − VCC VO GND (Tr1) (Tr2) ICC IO IF VF 5 6 8 |
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