TPS1100, TPS1100Y

SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995

4

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

electrical characteristics at TJ = 25°C (unless otherwise noted)

static

PARAMETER

TEST CONDITIONS

TPS1100

TPS1100Y

UNIT

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

VGS(th)

Gate-to-source

threshold voltage

VDS = VGS,

ID = – 250 µA

–1

– 1.25

– 1.50

– 1.25

V

VSD

Source-to-drain voltage

(diode-forward

voltage)†

IS = – 1 A,

VGS = 0 V

– 0.9

– 0.9

V

IGSS

Reverse gate current,

drain short circuited to

source

VDS = 0 V,

VGS = – 12 V

±100

nA

IDSS

Zero-gate-voltage drain

VDS =12 V

VGS =0V

TJ = 25°C

– 0.5

µA

IDSS

gg

current

VDS = – 12 V,

VGS = 0 V

TJ = 125°C

–10

µA

VGS = – 10 V

ID = – 1.5 A

180

180

rDS( )

Static drain-to-source

VGS = – 4.5 V

ID = – 0.5 A

291

400

291

m

Ω

rDS(on)

on-state resistance†

VGS = – 3 V

ID =0 2 A

476

700

476

m

Ω

VGS = – 2.7 V

ID = – 0.2 A

606

850

606

gfs

Forward

transconductance†

VDS = – 10 V,

ID = – 2 A

2.5

2.5

S

† Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2%

dynamic

PARAMETER

TEST CONDITIONS

TPS1100, TPS1100Y

UNIT

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Qg

Total gate charge

5.45

Qgs

Gate-to-source charge

VDS = – 10 V,

VGS = – 10 V,

ID = – 1 A

0.87

nC

Qgd

Gate-to-drain charge

1.4

td(on)

Turn-on delay time

4.5

ns

td(off)

Turn-off delay time

VDD = – 10 V,

RL = 10 Ω,ID = – 1 A,

13

ns

tr

Rise time

DD

,

RG = 6 Ω,

L

,

See Figures 1 and 2

D

,

10

tf

Fall time

2

ns

trr(SD)

Source-to-drain reverse recovery time

IF = 5.3 A,

di/dt = 100 A /

µs

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