TPS1100PWLE datasheet(6/15 Pages) TI2

6 / 15 page

TPS1100, TPS1100Y

SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

– 5

– 4

– 2

– 1

– 3

– 1

– 2– 3– 4– 5

– 6

– 7

– 6

DRAIN CURRENT

DRAIN-TO-SOURCE VOLTAGE

– 7

– 8

– 9 – 10

VGS = – 6 V

VDS – Drain-to-Source Voltage – V

VGS = – 8 V

VGS = – 7 V

VGS = – 3 V

VGS = – 4 V

VGS = – 2 V

VGS = – 5 V

TJ = 25°C

Figure 3

Figure 4

– 2

– 3

– 5

DRAIN CURRENT

GATE-TO-SOURCE VOLTAGE

– 7

– 1

– 4

– 6

VGS – Gate-to-Source Voltage – V

TJ = 150°C

TJ = 25°C

TJ = – 40°C

VDS = –10 V

– 5

– 4

– 2

– 1

– 3

– 7

– 6

0.3

0.2

0.1

– 0.1

– 1

0.4

0.5

STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE

DRAIN CURRENT

0.6

– 10

ID – Drain Current – A

0.7

VGS = – 2.7 V

VGS = – 3 V

VGS = – 4.5 V

VGS = –10 V

TJ = 25°C

Figure 5

200

150

0 – 1 – 2 – 3 – 4 – 5 – 6

250

300

CAPACITANCE

DRAIN-TO-SOURCE VOLTAGE

350

– 7 – 8 – 9

–12

100

–10 –11

Coss

VDS – Drain-to-Source Voltage – V

Ciss†

Crss‡

VGS = 0

f = 1 MHz

TJ = 25°C

Figure 6

†

Crss + Cgd,Coss + Cds )

Cgs Cgd

Cgs ) Cgd

≈ C

ds )

‡

iss +

Cgs ) Cgd,Cds(shorted)

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