®

INA116

2

SPECIFICATIONS

AT TA = +25°C, VS = ±15V, RL = 10kΩ, unless otherwise noted.

INA116P, U

INA116PA, UA

PARAMETER

CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

INPUT

Offset Voltage, RTI

Initial

TA = +25°C

±0.5 ±0.5/G

±2 ±2/G

T

±5 ±5/G

mV

vs Temperature

TA = TMIN to TMAX

See Typical Curve

T

vs Power Supply

VS = ±4.5V to ±18V

±10 ±15/G

±50 ±100/G

T

±100 ±200/G

µV/V

Long-Term Stability

±1 ±5/G

T

µV/mo

Bias Current

±3

±25

T

±100

fA

vs Temperature

See Typical Curve

T

Offset Current

±1

±25

T

±100

fA

vs Temperature

See Typical Curve

T

Impedance, Differential

>1015/0.2

T

Ω/pF

Common-Mode

>1015/7

T

Ω/pF

Common-Mode Voltage Range

(V+)–4

(V+)–2

TT

V

(V–)+4

(V–)+2.4

TT

V

Safe Input Voltage

±40

T

V

Common-Mode Rejection

VCM = ±11V, ∆RS = 1kΩ

G = 1

80

89

73

T

dB

G = 10

84

92

78

T

dB

G = 100

86

94

80

T

dB

VCM = ±5V, G = 1000

86

94

80

T

dB

NOISE

Voltage Noise, RTI

G = 1000, RS = 0Ω

f = 1kHz

28

T

nV/

√Hz

fB = 0.1Hz to 10Hz

2

T

µVp-p

Current Noise

f = 1kHz

0.1

T

fA/

√Hz

GAIN

Gain Equation

1+(50k

Ω/R

G)

T

V/V

Range of Gain

1

1000

TT

V/V

Gain Error

G = 1

±0.01

±0.05

T

0.1

%

G = 10

±0.25

±0.4

T

±0.5

%

G = 100

±0.35

±0.5

T

±0.7

%

G = 1000

±1.25

T

%

Gain vs Temperature(1)

G = 1

±5

±10

T

±20

ppm/

°C

50k

Ω Resistance(1)(2)

±25

±100

T

±100

ppm/

°C

Nonlinearity

G = 1

±0.0005

±0.005

T

±0.01

% of FSR

G = 10

±0.001

±0.005

T

±0.01

% of FSR

G = 100

±0.001

±0.005

T

±0.01

% of FSR

G = 1000

±0.005

T

% of FSR

GUARD OUTPUTS

Offset Voltage

±15

±50

TT

mV

Output Impedance

650

T

Ω

Current Drive

+2/–0.05

T

mA

OUTPUT

Voltage Positive

RL = 10kΩ

(V+) –1

(V+) –0.7

TT

V

Negative

RL = 10kΩ

(V–) +0.35

(V–) +0.2

TT

V

Load Capacitance Stability

1000

T

pF

Short-Circuit Current

+5/–12

T

mA

FREQUENCY RESPONSE

Bandwidth, –3dB

G = 1

800

T

kHz

G = 10

500

T

kHz

G = 100

70

T

kHz

G = 1000

7

T

kHz

Slew Rate

G = 10 to 200

0.8

T

V/

µs

Settling Time, 0.01%

10V Step, G = 1

22

T

µs

G = 10

25

T

µs

G = 100

145

T

µs

G = 1000

400

T

µs

Output Overload Recovery

50% Overdrive

20

T

µs

POWER SUPPLY

Voltage Range

±4.5

±15

±18

TT

T

V

Current

VIN = 0V

±1

±1.4

TT

mA

TEMPERATURE RANGE

Specification

–40

85

TT

°C

Operating

–40

125

TT

°C

θ

JA

80

T

°C/W

T Specification same as INA116P

NOTE: (1) Guaranteed by wafer test. (2) Temperature coefficient of the “50k

Ω” term in the gain equation.