6/15/05

Page 3 of 14

© 2005 Fairchild Semiconductor Corporation

GENERAL PURPOSE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

TIL111

TIL111-M

TIL117-M

MOC8100-M

Note

* Typical values at TA = 25°C unless otherwise noted

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter

Test Conditions

Device

Symbol

Min

Typ*

Max

Unit

EMITTER

Input Forward Voltage

(IF = 16 mA)

(TA = 25°C) TIL111/TIL111-M

VF

1.2

1.4

V

(IF = 10 mA; for

MOC8100-M)

(IF = 16 mA; for

TIL117-M)

(TA = 0-70°C)

MOC8100-M/

TIL117-M

1.2

1.4

(TA = -55°C)

1.32

(TA = +100°C)

1.10

Reverse Leakage Current

(VR = 3.0 V)

TIL111/TIL111-M/

TIL117-M

IR

0.001

10

µA

(VR = 6.0V)

MOC8100-M

0.001

10

µA

DETECTOR

Collector-Emitter Breakdown Voltage

(IC = 1.0 mA, IF = 0)

All

BVCEO

30

100

V

Collector-Base Breakdown Voltage

(IC = 10 µA, IF = 0)

All

BVCBO

70

120

V

Emitter-Base Breakdown Voltage

(IE = 10 µA, IF = 0)

All

BVEBO

710

V

Emitter-Collector Breakdown Voltage

(IF = 100µA, IF = 0)

TIL111-M

TIL117-M

BVECO

710

V

Collector-Emitter Dark Current

(VCE = 10 V, IF = 0)

TIL111/TIL111-M/

TIL117-M

ICEO

1

50

nA

(VCE = 5V, TA = 25°C)

MOC8100-M

ICEO

0.5

25

nA

(VCE = 30 V, IF = 0, TA = 70°C)

TIL117-M/

MOC8100-M

ICEO

0.2

50

µA

Collector-Base Dark Current

(VCB = 10 V)

TIL111/TIL111-M/

TIL117-M

ICBO

20

nA

(VCB = 5 V)

MOC8100-M

ICBO

10

nA

Capacitance

(VCE = 0 V, f = 1 MHz)

All

CCE

8pF

ISOLATION CHARACTERISTICS

Characteristic

Test Conditions

Symbol

Min

Typ*

Max

Units

Input-Output Isolation Voltage

(Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min)

VISO

5300

Vac(rms)

(‘-M’, White Package) (f = 60 Hz, t = 1 sec)

7500

Vac(pk)

Isolation Resistance

(VI-O = 500 VDC)

RISO

1011

Ω

Isolation Capacitance

(VI-O = 0, f = 1 MHz)

CISO

2pF

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