6/15/05

GENERAL PURPOSE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

Page 4 of 14

© 2005 Fairchild Semiconductor Corporation

TIL111

TIL111-M

TIL117-M

MOC8100-M

* Typical values at TA = 25°C

TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)

DC Characteristic

Test Conditions

Symbol

Device

Min

Typ*

Max

Unit

Current Transfer Ratio,

Collector to Emitter

(IF = 10 mA, VCE = 10 V)

CTRCE

TIL117-M

50

%

(IF = 1 mA, VCE = 5 V)

MOC8100-M

50

%

(IF = 1 mA, VCE = 5 V, TA = 0 to +70°C)

30

On-State Collector Current

(Phototransistor Operation)

(IF = 16 mA, VCE = 0.4 V)

IC(ON)

TIL111

TIL111-M

2mA

On-State Collector Current

(Photodiode Operation)

(IF = 16 mA, VCB = 0.4V)

7

µA

Collector-Emitter Saturation

Voltage

(IC = 500 µA, IF = 10 mA)

VCE (SAT)

TIL117-M

0.4

V

(IC = 2 mA, IF = 16 mA)

TIL111

TIL111-M

0.4

(IC = 100 µA, IF = 1 mA)

MOC8100-M

0.5

AC Characteristic

Turn-On Time

(IC = 2 mA, VCC = 10 V,

RL = 100Ω) (Fig. 20)

TON

MOC8100-M

20

µs

TIL117-M

10

Turn-Off Time

TOFF

MOC8100-M

20

µs

TIL117-M

10

Rise Time

tr

MOC8100-M

TIL117-M

2

µs

Fall Time

tf

2

Rise Time

(Phototransistor Operation)

(IC(ON) = 2 mA, VCC = 10 V,

RL = 100Ω) (Fig. 20)

tr

TIL111

TIL111-M

10

µs

Fall Time

(Phototransistor Operation)

tf

www.sycelectronica.com.ar