6

TAS5352A

SLES239A – NOVEMBER 2008 – REVISED DECEMBER 2016

www.ti.com

Product Folder Links: TAS5352A

Submit Documentation Feedback

Copyright © 2008–2016, Texas Instruments Incorporated

Recommended Operating Conditions (continued)

MIN

NOM

MAX

UNIT

CBST

Bootstrap capacitor,

selected value supports PWM frame rates from 192 kHz to 432 kHz

33

nF

ROC

Overcurrent programming resistor, resistor tolerance = 5%

22

22

47

k

Ω

REXT-PULLUP

External pullup resistor to 3.3 V to 5 V for SD or OTW

3.3

4.7

k

Ω

TJ

Junction temperature

0

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

TAS5352A

UNIT

DDV (HTSSOP)

44 PINS

RθJA

Junction-to-ambient thermal resistance

41.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

0.7

°C/W

RθJB

Junction-to-board thermal resistance

18

°C/W

ψJT

Junction-to-top characterization parameter

0.7

°C/W

ψJB

Junction-to-board characterization parameter

17.9

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

n/a

°C/W

(1)

Specified by design

6.5 Electrical Characteristics

PVDD_x = 34.5 V, GVDD_X = 12 V, VDD = 12 V, TC (Case temperature) = 25°C, and fS = 384 kHz (unless otherwise noted).

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INTERNAL VOLTAGE REGULATOR AND CURRENT CONSUMPTION

VREG

Voltage regulator

(only used as a reference node)

VDD = 12 V

3

3.3

3.6

V

IVDD

VDD supply current

Operating, 50% duty cycle

7.2

17

mA

Idle, reset mode

5.5

11

IGVDD_X

Gate supply current per half-bridge

50% duty cycle

8

16

mA

Reset mode

1

1.8

IPVDD_X

Half-bridge idle current

50% duty cycle with 10-μH and 470-nF

output filter

19

25

mA

Reset mode, no switching

525

630

μA

OUTPUT STAGE MOSFETS

RDSon,LS

Drain-to-source resistance, low-side

TJ = 25°C, excludes metalization

resistance

80

89

m

Ω

RDSon,HS

Drain-to-source resistance, high-side

TJ = 25°C, excludes metalization

resistance

80

89

m

Ω

I/O PROTECTION

Vuvp,G

Undervoltage protection limit

9.5

V

Vuvp,hyst

(1)

Undervoltage protection limit

250

mV

BSTuvpF

Puts device into RESET when BST

voltage falls below limit

5.9

V

BSTuvpR

Brings device out of RESET when

BST voltage rises above limit

7

V

OTW(1)

Overtemperature warning

115

125

135

°C

OTWHYST

(1)

Temperature drop needed below

OTW temp. for OTW to be inactive

after the OTW event

25

°C

OTE(1)

Overtemperature error threshold

145

155

165

°C