6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

Vs

Supply Voltage

6

V

VIN+, VIN-

Differential (VIN+) - (VIN-)

–40

40

V

Common - mode

GND – 0.3

40

V

VIO

SDA, ALERT, A0

GND – 0.3

6

V

VIO

SCL

GND – 0.3

VS + 0.3

V

Input current into any pin

5

mA

Open-drain digital output current (SDA, ALERT)

10

mA

TA

Operating Temperature

–55

150

°C

TJ

Junction temperature

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute maximum ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If briefly operating outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not

sustain damage, but it may not be fully functional. Operating the device in this manner may affect device reliability, functionality,

performance, and shorten the device lifetime.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

±2500

V

Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002, all

pins(2)

±1000

(1)

JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCM

Common-mode input range

0

36

V

VS

Operating supply range

2.7

5.5

V

TA

Ambient temperature

–40

125

°C

6.4 Thermal Information

THERMAL METRIC(1)

INA230

UNIT

DGS (VSSOP)

RGT(QFN)

10 PINS

16 PINS

RθJA

Junction-to-ambient thermal resistance

162.8

54.5

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

58.6

65.7

°C/W

RθJB

Junction-to-board thermal resistance

83.9

29.9

°C/W

ΨJT

Junction-to-top characterization parameter

7.6

3.8

°C/W

YJB

Junction-to-board characterization parameter

82.4

29.9

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

n/a

14.0

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

note.

INA230

SBOS601B – FEBRUARY 2012 – REVISED JANUARY 2025

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