DRV8300: 100-V Three-Phase BLDC Gate Driver

1 Features

• 100-V Three Phase Half-Bridge Gate driver

– Drives N-Channel MOSFETs (NMOS)

– Gate Driver Supply (GVDD): 5-20 V

– MOSFET supply (SHx) support upto 100 V

• Integrated Bootstrap Diodes (DRV8300D devices)

• Supports Inverting and Non-Inverting INLx inputs

• Bootstrap gate drive architecture

– 750-mA source current

– 1.5-A sink current

• Supports up to 15S battery powered applications

• Low leakage current on SHx pins (<55 µA)

• Absolute maximum BSTx voltage upto 125-V

• Supports negative transients upto -22-V on SHx

• Built-in cross conduction prevention

• Adjustable deadtime through DT pin for QFN

package variants

• Fixed deadtime insertion of 200 nS for TSSOP

package variants

• Supports 3.3-V and 5-V logic inputs with 20 V Abs

max

• 4 nS typical propogation delay matching

• Compact QFN and TSSOP packages

• Efficient system design with Power Blocks

• Integrated protection features

– BST undervoltage lockout (BSTUV)

– GVDD undervoltage (GVDDUV)

2 Applications

• E-Bikes, E-Scooters, and E-Mobility

• Fans, Pumps, and Servo Drives

• Brushless-DC (BLDC) Motor Modules and PMSM

• Cordless Garden and Power Tools, Lawnmowers

• Cordless Vacuum Cleaners

• Drones, Robotics, and RC Toys

• Industrial and Logistics Robots

3 Description

DRV8300 is 100-V three half-bridge gate drivers,

capable of driving high-side and low-side N-channel

power MOSFETs. The DRV8300D generates the

correct gate drive voltages using an integrated

bootstrap diode and external capacitor for the high-

side MOSFETs. The DRV8300N generates the correct

gate drive voltages using an external bootstrap diode

and external capacitor for the high-side MOSFETs.

GVDD is used to generate gate drive voltage for

the low-side MOSFETs. The Gate Drive architecture

supports peak up to 750-mA source and 1.5-A sink

currents.

The phase pins SHx is able to tolerate the significant

negative voltage transients; while high side gate

driver supply BSTx and GHx is able to support

to higher positive voltage transients (125-V) abs

max voltage which improves robustness of the

system. Small propagation delay and delay matching

specifications minimize the dead-time requirement

which further improves efficiency. Undervoltage

protection is provided for both low and high side

through GVDD and BST undervoltage lockout.

Device Information(1)

PART NUMBER

PACKAGE

BODY SIZE (NOM)

DRV8300DIPW

TSSOP (20)

6.40 mm × 4.40 mm

DRV8300DPW

TSSOP (20)

6.40 mm × 4.40 mm

DRV8300NIPW

TSSOP (20)

6.40 mm × 4.40 mm

DRV8300NPW

TSSOP (20)

6.40 mm × 4.40 mm

DRV8300DRGE

VQFN (24)

4.00 mm × 4.00 mm

DRV8300NRGE

VQFN (24)

4.00 mm × 4.00 mm

(1)

For all available packages, see the orderable addendum at

the end of the data sheet.

PVDD

Repeated for 3

phases

MCU

INHA

INHB

INHC

INLA

INLB

INLC

SHA, SHB, SHC

GLA, GLB. GLC

GHA, GHB, GHC

GVDD

GND

DRV8300D

DBx

BSTA, BSTB, BSTC

GVDD

Simplified Schematic for DRV8300D

PVDD

Repeated for 3

phases

MCU

INHA

INHB

INHC

INLA

INLB

INLC

SHA, SHB, SHC

GLA, GLB. GLC

GHA, GHB, GHC

GVDD

GND

DRV8300N

BSTA, BSTB, BSTC

GVDD

DBx

Simplified Schematic for DRV8300N

DRV8300

SLVSFG5D – SEPTEMBER 2020 – REVISED MARCH 2022

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.