BLF369 datasheet(6/17 Pages) NXP

6 / 17 page

BLF369_3

Preliminary data sheet

Rev. 03 — 29 January 2008

6 of 17

NXP Semiconductors

BLF369

Multi-use VHF power LDMOS transistor

7.2 2-Tone

7.3 Pulsed

VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz;

IDq =2 × 1.0 A; Th = 25 °C.

VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz;

IDq =2 × 1.0 A; Th = 25 °C.

Fig 4.

2-Tone power gain and drain efﬁciency as a

function of peak envelope power; typical values

Fig 5.

2-Tone third order intermodulation distortion as

a function of peak envelope power; typical

values

PL(PEP) (W)

600

400

200

001aae502

(dB)

ηD

(%)

ηD

PL(PEP) (W)

600

400

200

001aae503

−40

−20

IMD3

(dBc)

−60

f = 225 MHz; VDS =32V; IDq =2 × 1 A; tp = 2 ms;

δ = 10 %.

f = 225 MHz; VDS = 32 V; IDq =2 × 1 A; tp = 2 ms;

δ = 10 %.

Fig 6.

Pulsed power gain as function of load power;

typical values

Fig 7.

Pulsed drain efﬁciency as function of

load power; typical values

001aah498

PL (W)

800

600

200

400

(dB)

001aah499

PL (W)

800

600

200

400

ηD

(%)

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