BLF369 datasheet(1/17 Pages) NXP

Part #	BLF369

Description	Multi-use VHF power LDMOS transistor

PDF	17 Pages

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1 / 17 page

1.

Product proﬁle

1.1 General description

A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave

applications in the HF/VHF band up to 500 MHz.

[1]

Th is the heatsink temperature.

[2]

tp = 2 ms; δ = 10 %.

1.2 Features

I Typical pulsed performance at 225 MHz, a drain-source voltage VDS of 32 V and a

quiescent drain current IDq = 2 × 1.0 A:

N Load power PL = 500 W

N Power gain Gp =19dB

N Drain efﬁciency ηD =55%

I Advanced ﬂange material for optimum thermal behavior and reliability

I Excellent ruggedness

I High power gain

I Designed for broadband operation (HF/VHF band)

I Source on underside eliminates DC isolators, reducing common-mode inductance

I Easy power control

I Integrated ESD protection

I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS), using exemption No. 7 of the annex

BLF369

Multi-use VHF power LDMOS transistor

Rev. 03 — 29 January 2008

Preliminary data sheet

Table 1.

Typical performance

Typical RF performance at VDS = 32 V and Th =25 °C in a common-source 225 MHz test circuit.[1]

Mode of operation

f

PL

PL(PEP)

Gp

η

D

IMD3

(MHz)

(W)

(dB)

(%)

(dBc)

CW, class AB

225

500

-

18

60

-

2-tone, class AB

f1 = 225; f2 = 225.1

-

500

19

47

−28

pulsed, class AB [2]

225

500

-

19

55

-

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

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