BLF369 datasheet(7/17 Pages) NXP

Part #	BLF369

Description	Multi-use VHF power LDMOS transistor

PDF	17 Pages

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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7 / 17 page

BLF369_3

Preliminary data sheet

Rev. 03 — 29 January 2008

7 of 17

NXP Semiconductors

BLF369

Multi-use VHF power LDMOS transistor

7.4 Maximum heatsink temperature

The heatsink temperature is deﬁned 1 mm below the surface of the heatsink at the center

of the ﬂange.

The maximum allowable heatsink temperature is given in the following graphs at several

pulsed conditions as well as for CW.

f = 225 MHz; VDS =32V; IDq =2 × 1 A; tp = 100 µs;

δ = 10 %.

f = 225 MHz; VDS = 32 V; IDq =2 × 1 A; tp = 100 µs;

δ = 10 %.

Fig 8.

Pulsed power gain as function of load power;

typical values

Fig 9.

Pulsed drain efﬁciency as function of

load power; typical values

PL (W)

800

600

200

400

001aah500

(dB)

PL (W)

800

600

200

400

001aah501

ηD

(%)

BLF369 Datasheet(PDF) 7 Page - NXP Semiconductors