TAS5630B

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SLES217D – NOVEMBER 2010 – REVISED MARCH 2015

Electrical Characteristics (continued)

PVDD_X = 50 V, GVDD_X = 12 V, VDD = 12 V, TC (Case temperature) = 75°C, fS = 400 kHz, unless otherwise specified.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OUTPUT-STAGE MOSFETs

Drain-to-source resistance, low side (LS)

60

100

TJ = 25°C, excludes metallization

RDS(on)

m

Ω

resistance, GVDD = 12 V

Drain-to-source resistance, high side (HS)

60

100

I/O PROTECTION

Undervoltage protection limit, GVDD_x and

Vuvp,G

9.5

V

VDD

Vuvp,hyst

(1)

0.6

V

OTW1(1)

Overtemperature warning 1

95

100

105

°C

OTW2(1)

Overtemperature warning 2

115

125

135

°C

Temperature drop needed below OTW

OTWhyst

(1)

temperature for OTW to be inactive after

25

°C

OTW event

Overtemperature error

145

155

165

°C

OTE(1)

OTE-OTW differential

30

°C

A reset must occur for SD to be released

OTEhyst

(1)

25

following an OTE event.

OLPC

Overload protection counter

fPWM = 400 kHz

2.6

ms

Resistor – programmable, nominal peak

current in 1-

Ω load,

15

64-pin QFP package (PHD)

ROCP = 22 kΩ

Overcurrent limit protection

Resistor – programmable, nominal peak

IOC

current in 1-

Ω load,

A

15

44-pin PSOP3 package (DKD),

ROCP = 24 kΩ

Resistor – programmable, nominal peak

current in 1-

Ω load,

Overcurrent limit protection, latched

15

ROCP = 47 kΩ

Time from switching transition to flip-state

IOCT

Overcurrent response time

150

ns

induced by overcurrent

Connected when RESET is active to

Internal pulldown resistor at output of each

IPD

provide bootstrap charge. Not used in SE

3

mA

half-bridge

mode

STATIC DIGITAL SPECIFICATIONS

VIH

High-level input voltage

2

V

M1, M2, M3, RESET

VIL

Low-level input voltage

0.8

V

Ilkg

Input leakage current

100

μA

OTW/SHUTDOWN (SD)

Internal pullup resistance, OTW, OTW1,

RINT_PU

20

26

32

k

Ω

OTW2, CLIP, READY, SD to VREG

Internal pullup resistor

3

3.3

3.6

VOH

High-level output voltage

V

External pullup of 4.7 k

Ω to 5 V

4.5

5

VOL

Low-level output voltage

IO = 4 mA

200

500

mV

Device fanout OTW, OTW1, OTW2, SD,

FANOUT

No external pullup

30

devices

CLIP, READY

(1)

Specified by design.

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