TPD2E009

SLVS953B – JUNE 2009 – REVISED AUGUST 2015

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6.4 Thermal Information

TPD2E009

THERMAL METRIC(1)

DBZ (SOT)

DRT (SOT)

UNIT

3 PINS

3 PINS

RθJA

Junction-to-ambient thermal resistance

461.8

610

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

216.2

288

°C/W

RθJB

Junction-to-board thermal resistance

195.6

118.4

°C/W

ψJT

Junction-to-top characterization parameter

70.1

20.2

°C/W

ψJB

Junction-to-board characterization parameter

193.7

116.4

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off voltage

D+, D– pins to ground

5.5

V

VCLAMP

Clamp voltage

D+, D– pins to ground,

IIO = 1 A

8

V

IIO

Current from I/O port to supply pins

VIO = 2.5 V

0.01

0.1

μA

D+, D– pins,

VIO = 2.5 V, ID = 8 mA

0.6

0.8

0.95

lower clamp diode,

VD

Diode forward voltage

V

D+, D– pins,

upper clamp diode,

VCC = 0 V, ID = –8 mA

0.6

0.8

0.95

DRY package

RDYN

Dynamic resistance

D+, D– pins,

I = 1 A

1

Ω

D+, D– pins, DBZ

VIO = 2.5 V, f = 10 MHz

0.9

pF

Package

CIO

I/O capacitance

D+, D– pins, DRT

VIO = 2.5 V, f = 10 MHz

0.7

pF

Package

VBR

Break-down voltage

IIO = 1 mA

7

V

4

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