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TPS73601DBVR Datasheet(PDF) 8 Page - Texas Instruments |
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TPS73601DBVR Datasheet(HTML) 8 Page - Texas Instruments |
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8 / 48 page ![]() 5.7 Typical Characteristics (continued) For all voltage versions, at TJ = 25°C, VIN = VOUT(nom) + 0.5V, IOUT = 10mA, VEN = 1.7V, and COUT = 0.1μF, unless otherwise noted. 100 80 60 40 20 0 - 50 - 25 0 25 50 75 100 125 Temperature (°C) TPS73625DBV I OUT = 400mA Legacy silicon Figure 5-7. Dropout Voltage vs Temperature New silicon Figure 5-8. Dropout Voltage vs Temperature 30 25 20 15 10 5 0 V OUT Error (%) I OUT = 10mA Legacy silicon Figure 5-9. Output Voltage Accuracy Histogram 18 16 14 12 10 8 6 4 2 0 Worst Case dV OUT/dT (ppm/ C) I OUT = 10mA All Voltage Versions Legacy silicon Figure 5-10. Output Voltage Drift Histogram 1000 900 800 700 600 500 400 300 200 100 0 0 100 200 300 400 IOUT (mA) V IN = 5.5V V IN = 4V V IN = 2V Legacy silicon Figure 5-11. Ground Pin Current vs Output Current New silicon Figure 5-12. Ground Pin Current vs Output Current TPS736 SBVS038X – SEPTEMBER 2003 – REVISED MAY 2025 www.ti.com 8 Submit Document Feedback Copyright © 2025 Texas Instruments Incorporated Product Folder Links: TPS736 |
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