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TPS73601DBVR Datasheet(PDF) 11 Page - Texas Instruments |
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TPS73601DBVR Datasheet(HTML) 11 Page - Texas Instruments |
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11 / 48 page ![]() 5.7 Typical Characteristics (continued) For all voltage versions, at TJ = 25°C, VIN = VOUT(nom) + 0.5V, IOUT = 10mA, VEN = 1.7V, and COUT = 0.1μF, unless otherwise noted. 40 35 30 25 20 15 10 5 0 0.2 V V (V) – IN OUT Frequency = 10kHz C = 10 µF OUT V = 2.5V I = 100mA OUT OUT 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Legacy silicon Figure 5-25. PSRR (Ripple Rejection) vs VIN – VOUT New silicon Figure 5-26. PSRR (Ripple Rejection) vs VIN – VOUT 1 0.1 0.01 10 100 1k 10k 100k Frequency (Hz) C OUT = 1 µF C OUT = 0 µF C OUT = 10 µF I OUT = 150mA Legacy silicon Figure 5-27. Noise Spectral Density CNR = 0μF New silicon Figure 5-28. Noise Spectral Density CNR = 0μF 1 0.1 0.01 10 100 1k 10k 100k Frequency (Hz) I OUT = 150mA C OUT = 1 µF C OUT = 0 µF C OUT = 10 µF Legacy silicon Figure 5-29. Noise Spectral Density CNR = 0.01μF New silicon Figure 5-30. Noise Spectral Density CNR = 0.01μF www.ti.com TPS736 SBVS038X – SEPTEMBER 2003 – REVISED MAY 2025 Copyright © 2025 Texas Instruments Incorporated Submit Document Feedback 11 Product Folder Links: TPS736 |
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