5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

VDD

Supply voltage

–0.3

5.5

V

PINP

INP input pin power

20(2)

dBm

VINM

INM input pin voltage

–0.3

3.3(3)

V

VPD

Power-down pin voltage

–0.3

3.45(3)

V

TJ

Junction temperature

150

ºC

Tstg

Storage temperature

–40

150

ºC

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

(2)

When VDD = 0V, maximum value is 0dBm.

(3)

When VDD = 0V, maximum value is 0.3V.

5.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

±1000

V

Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002, all pins(2)

±250

(1)

JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VDD

Supply voltage

4.75

5

5.25

V

TA

Ambient free-air temperature

–40

25

°C

TJ

Junction temperature

125

°C

5.4 Thermal Information

THERMAL METRIC(1)

TRF1213

UNIT

RPV (WQFN-FCRLF)

12 PINS

RθJA

Junction-to-ambient thermal resistance

66.7

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

35.3

°C/W

RθJB

Junction-to-board thermal resistance

31.1

°C/W

ΨJT

Junction-to-top characterization parameter

0.6

°C/W

ΨJB

Junction-to-board characterization parameter

31.1

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

10.7

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

TRF1213

SLOSED5 – DECEMBER 2024

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