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RF3315
Rev A10 DS050318
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
+20
dBm
Device Voltage
-0.5 to +6.0
V
Device Current
250
mA
Operating Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Max. TJ (MTTF>100years)
165
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
AC Specifications (2GHz)
VCC=5V, RFIN=-10dBm, Freq=2.0GHz, with
2GHz application schematic.
Frequency
300
3000
MHz
Gain (Small Signal)
11.0
12.5
dB
F=2GHz
Input Return Loss
15
dB
F=2GHz
Output Return Loss
15
dB
F=2GHz
Output IP3
+36
+40.0
dBm
F1= 1.99GHz, F2=2.00GHz, PIN=-5dBm
Output P1dB
+21
+23.0
dBm
Noise Figure
3.0
4.0
dB
AC Specifications (900MHz)
VCC=5V, RFIN=-10dBm, Freq=900MHz, with
900MHz application schematic.
Frequency
300
3000
MHz
Gain (Small Signal)
16
18
dB
Input Return Loss
20
dB
Output Return Loss
20
dB
Output IP3
+36
+41
dBm
F1= 900MHz, F2=901MHz, PIN=-10dBm
Output P1dB
+23
+25
dBm
Noise Figure
2.5
3.5
dB
Thermal
ICC=150mA, PDISS=770mW. (See Note.)
ThetaJC
88
°C/W
Maximum Measured Junction
Temperature at DC Bias Condi-
tions
154
°C
TCASE=+85°C
Mean Time To Failure
370
years
TCASE=+85°C
DC Specifications
Device Voltage
4.5
5.0
5.5
V
ICC=150mA
Operating Current Range
100
150
170
mA
VCC=5V
Note: The RF3315 must be operated at or below 170mA to ensure the highest possible reliability and electrical performance.
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
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