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DS1302 Datasheet(PDF) 8 Page - Dallas Semiconductor |
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DS1302 Datasheet(HTML) 8 Page - Dallas Semiconductor |
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8 / 16 page ![]() DS1302 Trickle-Charge Timekeeping Chip 8 of 16 CLOCK/CALENDAR BURST MODE The clock/calendar command byte specifies burst mode operation. In this mode, the first eight clock/calendar registers can be consecutively read or written (see Table 2) starting with bit 0 of address 0. If the write-protect bit is set high when a write clock/calendar burst mode is specified, no data transfer will occur to any of the eight clock/calendar registers (this includes the control register). The trickle charger is not accessible in burst mode. At the beginning of a clock burst read, the current time is transferred to a second set of registers. The time information is read from these secondary registers, while the clock may continue to run. This eliminates the need to re-read the registers in case of an update of the main registers during a read. RAM The static RAM is 31 x 8 bytes addressed consecutively in the RAM address space. RAM BURST MODE The RAM command byte specifies burst mode operation. In this mode, the 31 RAM registers can be consecutively read or written (see Table 2) starting with bit 0 of address 0. REGISTER SUMMARY A register data format summary is shown in Table 2. CRYSTAL SELECTION A 32.768kHz crystal can be directly connected to the DS1302 via pins 2 and 3 (X1, X2). The crystal selected for use should have a specified load capacitance (CL) of 6pF. For more information on crystal selection and crystal layout consideration, refer to Application Note 58: Crystal Considerations for Dallas Real-Time Clocks. Figure 5. Data Transfer Summary A1 A2 A3 A4 R/C 1 CE SCLK I/O R/W A0 D1 D2 D3 D4 D5 D6 D7 D0 SINGLE-BYTE READ A1 A2 A3 A4 R/C 1 CE SCLK I/O R/W A0 D1 D2 D3 D4 D5 D6 D7 D0 SINGLE-BYTE WRITE NOTE: IN BURST MODE, CE IS KEPT HIGH AND ADDITIONAL SCLK CYCLES ARE SENT UNTIL THE END OF THE BURST. |
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