Electrical Characteristics

Version 1.3, January 15, 2003

Proprietary to OmniVision Technologies

5

Omni ision

Electrical Characteristics

NOTE:

Exceeding the Absolute Maximum ratings shown above invalidates all AC and DC electrical specifications and may

result in permanent device damage.

Table 2

Absolute Maximum Ratings

Ambient Storage Temperature

-40ºC to +125ºC

Supply Voltages (with respect to Ground)

VDD-A

3V

VDD-C

3V

VDD-IO

4V

All Input/Output Voltages (with respect to Ground)

-0.3V to VDD_IO+1V

Lead Temperature, Surface-mount process

+230ºC

ESD Rating, Human Body model

2000V

Table 3

DC Characteristics (0°C < TA < 70°C)

Symbol

Parameter

Condition

Min

Typ

Max

Unit

VDD-A

DC supply voltage – Analog

—

2.40

2.5

2.60

V

VDD-C

DC supply voltage – Core

—

2.25

2.5

2.75

V

VDD-IO

DC supply voltage – I/O

—

2.25

—

3.3

V

IDDA

Active (Operating) Current

See Note a

a.

VDD-A = VDD-C = 2.5V, VDD-IO = 3.0V

IDDA = ∑{IDD-IO+ IDD-C + IDD-A}, fCLK = 24MHz at 30 fps, no I/O loading

15

mA

IDDS-SCCB

Standby Current

See Note b

b.

VDD-A = VDD-C = 2.5V, VDD-IO = 3.0V

IDDS:SCCB refers to a SCCB-initiated Standby, while IDDS:PWDN refers to a PWDN pin-initiated Standby

1mA

IDDS-PWDN

Standby Current

10

µA

VIH

Input voltage HIGH

CMOS

0.7 x VDD-IO

V

VIL

Input voltage LOW

0.3 x VDD-IO

V

VOH

Output voltage HIGH

CMOS

(IOH / IOL)

0.9 x VDD-IO

V

VOL

Output voltage LOW

0.1 x VDD-IO

V

IOH

Output current HIGH

See Note c

c.

Standard Output Loading = 25pF, 1.2K

Ω to 3V

8mA

IOL

Output current LOW

15

mA

IL

Input/Output Leakage

GND to VDD-IO

± 1

µA